RQJ0302NGDQA features ? low on-resistance r ds(on) = 138 m ? typ (v gs = ?10 v, i d = ?1.1 a) ? low drive current ? high speed switching ? 4.5 v gate drive outline (package name: mpak) 1. source 2. gate 3. drain s d g 2 2 1 1 3 3 note: marking is ?ng?. absolute maximum ratings (ta = 25c) item symbol ratings unit drain to source voltage v dss ?30 v gate to source voltage v gss +10 / ?20 v drain current i d ?2.2 a drain peak current i d(pulse) note1 ?5 a body - drain diode reverse drain current i dr ?2.2 a channel dissipation pch note2 0.8 w channel temperature tch 150 c storage temperature tstg ?55 to +150 c notes: 1. pw 10 s, duty cycle 1% 2. when using the glass epoxy board (fr-4: 40 40 1 mm) product specification 1 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
electrical characteristics (ta = 25c) item symbol min typ max unit test conditions drain to source breakdown voltage v (br)dss ?30 ? ? v i d = ?10 ma, v gs = 0 gate to source breakdown voltage v (br)gss +10 ? ? v i g = +100 a, v ds = 0 gate to source breakdown voltage v (br)gss ?20 ? ? v i g = ?100 a, v ds = 0 gate to source leak current i gss ? ? +10 a v gs = +8 v, v ds = 0 gate to source leak current i gss ? ? ?10 a v gs = ?16 v, v ds = 0 drain to source leak current i dss ? ? ?1 a v ds = ?30 v, v gs = 0 gate to source cutoff voltage v gs(off) ?1.0 ? ?2.0 v v ds = ?10 v, i d = ?1 ma r ds(on) ? 138 173 m ? i d = ?1.1 a, v gs = ?10 v note3 drain to source on state resistance r ds(on) ? 216 303 m ? i d = ?1.1 a, v gs = ?4.5 v note3 forward transfer admittance |y fs | 1.2 2.1 ? s i d = ?1.1 a, v ds = ?10 v note3 input capacitance ciss ? 195 ? pf output capacitance coss ? 42 ? pf reverse transfer capacitance crss ? 29 ? pf v ds = ?10 v, v gs = 0, f = 1 mhz turn - on delay time t d(on) ? 19 ? ns rise time t r ? 25 ? ns turn - off delay time t d(off) ? 30 ? ns fall time t f ? 4.6 ? ns i d = ?0.5 a, v gs = ?10 v, r l = 20 ? , rg = 4.7 ? total gate charge qg ? 4.2 ? nc gate to source charge qgs ? 0.7 ? nc gate to drain charge qgd ? 1.0 ? nc v dd = ?10 v, v gs = ?10 v, i d = ?2.2a body - drain diode forward voltage v df ? ?0.9 ? v i f = ?1.5 a, v gs = 0 note3 notes: 3. pulse test RQJ0302NGDQA product specification 2 of 2 4008-318-123 sales@twtysemi.com http://www.twtysemi.com
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